Toshiba Corporation Memory - Unclassified Memory - TH58NYG3S0HBAI4 TH58NYG3S0HBAI4

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 813031-TH58NYG3S0HBA I4 Mounting Style: SMD Technology: FLASH - NAND (SLC) Memory Type: Non-Volatile Memory Size: 8Gb (1G x 8) Access Time: 25ns Supplier Device Package: 63-TFBGA (9x11) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 210 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 813031-TH58NYG3S0HBA I4 Mounting Style: SMD Technology: FLASH - NAND (SLC) Memory Type: Non-Volatile Memory Size: 8Gb (1G x 8) Access Time: 25ns Supplier Device Package: 63-TFBGA (9x11) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 210 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V
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Suppliers

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Supplier Links
Memory - Unclassified Memory - TH58NYG3S0HBAI4 - 813031-TH58NYG3S0HBAI4 - Win Source Electronics
Laguna Hills, CA, United States
Memory - Unclassified Memory - TH58NYG3S0HBAI4
813031-TH58NYG3S0HBAI4
Memory - Unclassified Memory - TH58NYG3S0HBAI4 813031-TH58NYG3S0HBAI4
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 813031-TH58NYG3S0HBA I4 Mounting Style: SMD Technology: FLASH - NAND (SLC) Memory Type: Non-Volatile Memory Size: 8Gb (1G x 8) Access Time: 25ns Supplier Device Package: 63-TFBGA (9x11) Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 25ns Memory Interface: Parallel Manufacturer Package: 63-VFBGA Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 210 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.95V

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 813031-TH58NYG3S0HBAI4
Mounting Style: SMD
Technology: FLASH - NAND (SLC)
Memory Type: Non-Volatile
Memory Size: 8Gb (1G x 8)
Access Time: 25ns
Supplier Device Package: 63-TFBGA (9x11)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 210
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.95V

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Integrated Circuits (ICs) - Memory - TH58NYG3S0HBAI4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
TH58NYG3S0HBAI4
Integrated Circuits (ICs) - Memory TH58NYG3S0HBAI4
IC FLASH 8GBIT PARALLEL 63TFBGA

IC FLASH 8GBIT PARALLEL 63TFBGA

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 813031-TH58NYG3S0HBAI4 TH58NYG3S0HBAI4
Product Name Memory - Unclassified Memory - TH58NYG3S0HBAI4 Integrated Circuits (ICs) - Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile
Access Time 25 ns 25 ns
Cycle Time 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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