Toshiba America Electronic Components, Inc. Memory - EEPROM - TH58BVG3S0HBAI6 TH58BVG3S0HBAI6

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1099235-TH58BVG3S0HBAI6
Memory Type: EEPROM, NAND
Memory Size: 1 GB
Interface: Parallel
Height: 1 mm
Access Time: 220 µs
Categories: EEPROM
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 85 °C
Min Operating Temperature: -40 °C
Manufacturer Package Identifier: P-VFBGA67-0608-0.80-001
Max Supply Voltage: 3.6 V
Min Supply Voltage: 2.7 V

Product overview: TH58BVG3S0HBAI6 from Toshiba Electronic Devices and Storage Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-TH58BVG3S0HBAI6 can be used for catalog matching and distributor lookup.