Toshiba America Electronic Components, Inc. Memory - EEPROM - TH58BVG3S0HBAI6 TH58BVG3S0HBAI6

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1099235-TH58BVG3S0HB AI6 Memory Type: EEPROM, NAND Memory Size: 1 GB Interface: Parallel Height: 1 mm Access Time: 220 µs Categories: EEPROM Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Min Operating Temperature: -40 °C Manufacturer Package Identifier: P-VFBGA67-0608-0.80- 001 Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1099235-TH58BVG3S0HB AI6 Memory Type: EEPROM, NAND Memory Size: 1 GB Interface: Parallel Height: 1 mm Access Time: 220 µs Categories: EEPROM Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Min Operating Temperature: -40 °C Manufacturer Package Identifier: P-VFBGA67-0608-0.80- 001 Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V
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Memory - EEPROM - TH58BVG3S0HBAI6 - 1099235-TH58BVG3S0HBAI6 - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - TH58BVG3S0HBAI6
1099235-TH58BVG3S0HBAI6
Memory - EEPROM - TH58BVG3S0HBAI6 1099235-TH58BVG3S0HBAI6
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1099235-TH58BVG3S0HB AI6 Memory Type: EEPROM, NAND Memory Size: 1 GB Interface: Parallel Height: 1 mm Access Time: 220 µs Categories: EEPROM Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 85 °C Min Operating Temperature: -40 °C Manufacturer Package Identifier: P-VFBGA67-0608-0.80- 001 Max Supply Voltage: 3.6 V Min Supply Voltage: 2.7 V

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1099235-TH58BVG3S0HBAI6
Memory Type: EEPROM, NAND
Memory Size: 1 GB
Interface: Parallel
Height: 1 mm
Access Time: 220 µs
Categories: EEPROM
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 85 °C
Min Operating Temperature: -40 °C
Manufacturer Package Identifier: P-VFBGA67-0608-0.80-001
Max Supply Voltage: 3.6 V
Min Supply Voltage: 2.7 V

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Technical Specifications

  Win Source Electronics
Product Category Memory Chips
Product Number 1099235-TH58BVG3S0HBAI6
Product Name Memory - EEPROM - TH58BVG3S0HBAI6
Memory Category EEPROM, NAND
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