Toshiba Corporation Memory - EEPROM - TH58BVG2S3HTA00 TH58BVG2S3HTA00

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EEPROM - TH58BVG2S3HTA00 - 212809-TH58BVG2S3HTA00 - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - TH58BVG2S3HTA00
212809-TH58BVG2S3HTA00
Memory - EEPROM - TH58BVG2S3HTA00 212809-TH58BVG2S3HTA00
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212809-TH58BVG2S3HTA00
Packaging: Tray
Mounting: SMD (SMT)
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: EEPROM
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - TH58BVG2S3HTA00 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
TH58BVG2S3HTA00
Integrated Circuits (ICs) - Memory TH58BVG2S3HTA00
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 212809-TH58BVG2S3HTA00 TH58BVG2S3HTA00
Product Name Memory - EEPROM - TH58BVG2S3HTA00 Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM Flash; Non-Volatile
Access Time 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS26KS256S-DPBLI00 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 96 ns
Density 256000 kbits
View Details
CD54HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD54HC40105F3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP
View Details
3 suppliers
Flash Memory - 1882657P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details