Toshiba Corporation Memory - EEPROM - TH58BVG2S3HTA00 TH58BVG2S3HTA00

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EEPROM - TH58BVG2S3HTA00 - 212809-TH58BVG2S3HTA00 - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - TH58BVG2S3HTA00
212809-TH58BVG2S3HTA00
Memory - EEPROM - TH58BVG2S3HTA00 212809-TH58BVG2S3HTA00
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212809-TH58BVG2S3HTA00
Packaging: Tray
Mounting: SMD (SMT)
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: EEPROM
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - TH58BVG2S3HTA00 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
TH58BVG2S3HTA00
Integrated Circuits (ICs) - Memory TH58BVG2S3HTA00
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 212809-TH58BVG2S3HTA00 TH58BVG2S3HTA00
Product Name Memory - EEPROM - TH58BVG2S3HTA00 Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM Flash; Non-Volatile
Access Time 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL128S-10DHB023 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 128000 kbits
View Details
2 suppliers
Memory - EEPROM - CAS24S128C4NTR - 865754-CAS24S128C4NTR - Win Source Electronics
Specs
Memory Category EEPROM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type 4-WLCSP
View Details
2 suppliers
Memory - Controllers - DP8421AVX-20 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
View Details
2 suppliers
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details