Toshiba Corporation Memory - EEPROM - TH58BVG2S3HTA00 TH58BVG2S3HTA00

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - EEPROM - TH58BVG2S3HTA00 - 212809-TH58BVG2S3HTA00 - Win Source Electronics
Laguna Hills, CA, United States
Memory - EEPROM - TH58BVG2S3HTA00
212809-TH58BVG2S3HTA00
Memory - EEPROM - TH58BVG2S3HTA00 212809-TH58BVG2S3HTA00
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212809-TH58BVG2S3HTA 00 Packaging: Tray Mounting: SMD (SMT) Technology: EEPROM - NAND Memory Size: 4Gb (512M x 8) Access Time: 25ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: EEPROM Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212809-TH58BVG2S3HTA00
Packaging: Tray
Mounting: SMD (SMT)
Technology: EEPROM - NAND
Memory Size: 4Gb (512M x 8)
Access Time: 25ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: EEPROM
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - TH58BVG2S3HTA00 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
TH58BVG2S3HTA00
Integrated Circuits (ICs) - Memory TH58BVG2S3HTA00
IC FLASH 4GBIT PARALLEL 48TSOP I

IC FLASH 4GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 212809-TH58BVG2S3HTA00 TH58BVG2S3HTA00
Product Name Memory - EEPROM - TH58BVG2S3HTA00 Integrated Circuits (ICs) - Memory
Memory Category EEPROM; EEPROM Flash; Non-Volatile
Access Time 25 ns 25 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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