Toshiba America Electronic Components, Inc. SOT-23 Bipolar Transistor TBC857B

Description
X34 PB-F SOT-23 TRANSISTOR FOR L Product overview: TBC857B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TBC857B can be used for catalog matching and distributor lookup.
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Description
X34 PB-F SOT-23 TRANSISTOR FOR L Product overview: TBC857B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TBC857B can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
SOT-23 Bipolar Transistor
276-TBC857B
SOT-23 Bipolar Transistor 276-TBC857B
X34 PB-F SOT-23 TRANSISTOR FOR L Product overview: TBC857B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TBC857B can be used for catalog matching and distributor lookup.

X34 PB-F SOT-23 TRANSISTOR FOR L Product overview: TBC857B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TBC857B can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single - TBC857B - 355750-TBC857B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TBC857B
355750-TBC857B
TRANSISTORS - Transistors (BJT) - Single - TBC857B 355750-TBC857B
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 355750-TBC857B Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23 Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 650mV @ 100mA, 5mA Collector Cut-off Current(Max): 30nA (ICBO) Typical Gain (hFE) (Min): 210 @ 2mA, 5V Maximum Power Dissipation: 320mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 355750-TBC857B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 650mV @ 100mA, 5mA
Collector Cut-off Current(Max): 30nA (ICBO)
Typical Gain (hFE) (Min): 210 @ 2mA, 5V
Maximum Power Dissipation: 320mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 276-TBC857B 355750-TBC857B
Product Name SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - TBC857B
Polarity PNP PNP; PNP
Package Type Reel - TR SOT3; SOT23; SOT-23
Packing Method Reel - TR Tape Reel; Reel - TR
PD 320 milliwatts
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