Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single - TBC857B TBC857B

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 355750-TBC857B
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 650mV @ 100mA, 5mA
Collector Cut-off Current(Max): 30nA (ICBO)
Typical Gain (hFE) (Min): 210 @ 2mA, 5V
Maximum Power Dissipation: 320mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

X34 PB-F SOT-23 TRANSISTOR FOR L Product overview: TBC857B from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TBC857B can be used for catalog matching and distributor lookup.