Toshiba Electronics (UK) Ltd Single FETs, MOSFETs SSM6K211FE,LF

Description
N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6
Request a Quote Datasheet
Description
N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SSM6K211FELFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SSM6K211FELFTR-ND
Single FETs, MOSFETs SSM6K211FELFTR-ND
N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6

N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6

Buy Now Datasheet
Single FETs, MOSFETs - SSM6K211FELFCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SSM6K211FELFCT-ND
Single FETs, MOSFETs SSM6K211FELFCT-ND
N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6

N-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount ES6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6K211FE,LF - 101360-SSM6K211FE,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6K211FE,LF
101360-SSM6K211FE,LF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6K211FE,LF 101360-SSM6K211FE,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 101360-SSM6K211FE,LF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: ES6 (1.6x1.6) Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 1V @ 1mA Max Gate Charge: 10.8nC @ 4.5V Max Input Capacitance: 510pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 47 mOhm @ 2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 101360-SSM6K211FE,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: ES6 (1.6x1.6)
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 10.8nC @ 4.5V
Max Input Capacitance: 510pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 47 mOhm @ 2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
20V 3.2A MOSFET Transistor
278-SSM6K211FE,LF
20V 3.2A MOSFET Transistor 278-SSM6K211FE,LF
MOSFET N-CH 20V 3.2A ES6 Product overview: SSM6K211FE,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM6K211FE,LF can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 3.2A ES6 Product overview: SSM6K211FE,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM6K211FE,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SSM6K211FE,LF - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SSM6K211FE,LF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SSM6K211FE,LF
MOSFET N-CH 20V 3.2A ES6

MOSFET N-CH 20V 3.2A ES6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SSM6K211FELFTR-ND 101360-SSM6K211FE,LF 278-SSM6K211FE,LF SSM6K211FE,LF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6K211FE,LF 20V 3.2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT-563, SOT-666 SOT3; ES6 (1.6x1.6) Tape & Reel (TR) SOT-563, SOT-666
V(BR)DSS 20 volts
PD 500 milliwatts 500 milliwatts
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