Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3J36MFV,L3F SSM3J36MFV,L3F

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 099743-SSM3J36MFV,L3F
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Temperature Range - Operating: 150°C (TJ)
Case / Package: VESM
Dimension: SOT-723
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 330mA (Ta)
Max Gate Charge: 1.2nC @ 4V
Max Input Capacitance: 43pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 1.31 Ohm @ 100mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 20V 0.33A VESM Product overview: SSM3J36MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.33A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM3J36MFV,L3F can be used for catalog matching and distributor lookup.