Toshiba Imaging Systems Division TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3J108TU SSM3J108TU

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 095144-SSM3J108TU
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: UFM
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Input Capacitance: 250pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 158 mOhm @ 800mA, 4V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 20V 1.8A UFM Product overview: SSM3J108TU from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 1.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM3J108TU can be used for catalog matching and distributor lookup.