RN4906FE is a dual transistor device containing a PNP and an NPN bipolar transistor with built-in bias resistors, designed for switching, inverter, interface, and driver circuits. Both transistors are packaged in an Extreme-Super-Mini 6-pin package weighing 0.003 g. The PNP transistor has a collector-emitter voltage rating of -50 V and a collector current of -100 mA, while the NPN transistor supports +50 V and +100 mA. Each has a collector power dissipation limit of 100 mW and a maximum junction temperature of 150 °C. Bias resistors are rated at 4.7 kΩ (R1) and 47 kΩ (R2), with a tolerance range of 3.29 to 6.11 kΩ for R1. The devices meet the storage temperature range of -55 to 150 °C and feature transition frequencies up to 250 MHz. The product is not intended for use in safety-critical or high-reliability applications such as medical, automotive, or aerospace systems.
TRANS NPN/PNP PREBIAS 0.1W ES6 Product overview: RN4906FE,LF(CB from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN4906FE,LF(CB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 293-RN4906FE,LF(CB |
| Product Name | 0.1W Bipolar Transistor |
| Polarity | NPN; PNP |
