Toshiba Electronics (UK) Ltd 50V 0.1A Bipolar Transistor RN1101MFV,L3F

Description
TRANS PREBIAS NPN 50V 0.1A VESM Product overview: RN1101MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101MFV,L3F can be used for catalog matching and distributor lookup.
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV,L3F - 183534-RN1101MFV,L3F - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - RN1101MFVL3FTR-ND - DigiKey
    DigiKey
  • Single, Pre-Biased Bipolar Transistors - RN1101MFV,L3F - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1101MFV,L3F - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
TRANS PREBIAS NPN 50V 0.1A VESM Product overview: RN1101MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101MFV,L3F can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
50V 0.1A Bipolar Transistor
292-RN1101MFV,L3F
50V 0.1A Bipolar Transistor 292-RN1101MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM Product overview: RN1101MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101MFV,L3F can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V 0.1A VESM Product overview: RN1101MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1101MFV,L3F can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV,L3F - 183534-RN1101MFV,L3F - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV,L3F
183534-RN1101MFV,L3F
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV,L3F 183534-RN1101MFV,L3F
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183534-RN1101MFV,L3F Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: VESM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 10mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183534-RN1101MFV,L3F
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: VESM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - RN1101MFVL3FTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
RN1101MFVL3FTR-ND
Single, Pre-Biased Bipolar Transistors RN1101MFVL3FTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - RN1101MFV,L3F - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
RN1101MFV,L3F
Single, Pre-Biased Bipolar Transistors RN1101MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM

TRANS PREBIAS NPN 50V 0.1A VESM

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1101MFV,L3F - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN1101MFV,L3F
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN1101MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM

TRANS PREBIAS NPN 50V 0.1A VESM

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-RN1101MFV,L3F 183534-RN1101MFV,L3F RN1101MFVL3FTR-ND RN1101MFV,L3F RN1101MFV,L3F
Product Name 50V 0.1A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1101MFV,L3F Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Tape & Reel (TR) SOT3; VESM SOT-723 SOT-723
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
VCEO 50 volts 50 volts 50 volts
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