Toshiba Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - K6A65D K6A65D

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 205810-K6A65D
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 1050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.11 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

MOSFET N-CH 650V 5A TO-220SIS Product overview: K6A65D from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-K6A65D can be used for catalog matching and distributor lookup.