Toshiba Corporation Transistor GT8J101

Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL IGBT, 8 AMP, 600 V COLLECTOR EMITTER VOLTAGE, 30 WATT POWER DISSIPATION, SINGLE SWITCH, TO247 CASE, THROUGH HOLE MOUNT. FREE 2 YEAR RADWELL WARRANTY
Description
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL IGBT, 8 AMP, 600 V COLLECTOR EMITTER VOLTAGE, 30 WATT POWER DISSIPATION, SINGLE SWITCH, TO247 CASE, THROUGH HOLE MOUNT. FREE 2 YEAR RADWELL WARRANTY

Suppliers

Company
Product
Description
Supplier Links
Transistor - 25249656 - Radwell International
Willingboro, NJ, United States
Transistor
25249656
Transistor 25249656
DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL IGBT, 8 AMP, 600 V COLLECTOR EMITTER VOLTAGE, 30 WATT POWER DISSIPATION, SINGLE SWITCH, TO247 CASE, THROUGH HOLE MOUNT. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, N-CHANNEL IGBT, 8 AMP, 600 V COLLECTOR EMITTER VOLTAGE, 30 WATT POWER DISSIPATION, SINGLE SWITCH, TO247 CASE, THROUGH HOLE MOUNT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 25249656
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor - TGF2819-FL - Qorvo
Specs
Transistor Technology / Material DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
Interfet -  - Micross Components, Inc.
Micross Components, Inc.
View Details
40V 195A TO220 MOSFET Transistor - 278-AUIRF2804 - ERSAELECTRONICS PTE. LTD.
Specs
PD 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
4 suppliers