IGBT 1000V 60A 170W TO3P LH Product overview: GT60N321 from Toshiba Electronic Devices and Storage Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 60A, 170W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1000V, 60A, 170W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GT60N321 can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 204504-GT60N321
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 2.5μs
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(LH)
Maximum Current Collector: 60A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1000V
Maximum Power Dissipation: 170W
Pulsed Collector Current: 120A
Collector-emitter saturation voltage(Max): 2.8V @ 15V, 60A
Turn-on and Turn-off delay time: 330ns/700ns
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-GT60N321 | 204504-GT60N321 |
| Product Name | 1000V 60A 170W IGBT Transistor | IGBTs - Single - GT60N321 |
| PD | 170000 milliwatts | 170000 milliwatts |
