Toshiba America Electronic Components, Inc. IGBTs - Single - GT50J121 GT50J121

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 204503-GT50J121
Packaging: Tube/Rail
Mounting: Through Hole
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(LH)
Maximum Current Collector: 50A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 240W
Pulsed Collector Current: 100A
Collector-emitter saturation voltage(Max): 2.45V @ 15V, 50A
Total Switching Energy(Ets): 1.3mJ (on), 1.34mJ (off)
Turn-on and Turn-off delay time: 90ns/300ns
Testing Conditions: 300V, 50A, 13 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

IGBT 600V 50A 240W TO3P LH Product overview: GT50J121 from Toshiba Electronic Devices and Storage Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 50A, 240W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 50A, 240W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GT50J121 can be used for catalog matching and distributor lookup.