Trans IGBT Chip N-CH 600V 30A 155000mW 3-Pin(3+Tab) TO-3PN / N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Product overview: GT30J301 from Toshiba Electronic Devices and Storage Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 30A, 155000mW. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel, 600V, 30A, 155000mW. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GT30J301 can be used for catalog matching and distributor lookup.
DISCONTINUED BY MANUFACTURER, INSULATED GATE BIPOLAR TRANSISTOR, 30A I(C), 600V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Radwell International | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-GT30J301 | 120360209 |
| Product Name | N-Channel 600V 30A 155000mW IGBT Transistor | IGBT |
