Silicon N Channel IGBT Product overview: GT30J101 from Toshiba Electronic Devices and Storage Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, N-Channel. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GT30J101 can be used for catalog matching and distributor lookup.
TRANSISTOR, BIPOLAR, INSULATED, N CHANNEL IGBT, 600 V, 155 W, TO-3PN, THROUGH HOLE, SINGLE. FREE 2 YEAR RADWELL WARRANTY
| ERSAELECTRONICS PTE. LTD. | Radwell International | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | RF Transistors |
| Product Number | 279-GT30J101 | 54860906 |
| Product Name | N-Channel IGBT Transistor | Transistor |
