IGBT 600V 10A 60W TO220SM Product overview: GT10J312 from Toshiba Electronic Devices and Storage Corporation is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A, 60W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 600V, 10A, 60W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-GT10J312 can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 067736-GT10J312
Packaging: Tube/Rail
Mounting: SMD (SMT)
Reverse Recovery Time (trr): 200ns
Input Type: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SM
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Maximum Power Dissipation: 60W
Pulsed Collector Current: 20A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Turn-on and Turn-off delay time: 400ns/400ns
Testing Conditions: 300V, 10A, 100 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 279-GT10J312 | 067736-GT10J312 |
| Product Name | 600V 10A 60W IGBT Transistor | IGBTs - Single - GT10J312 |
| PD | 60000 milliwatts | 60000 milliwatts |
