Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075647-2SK3906
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(N)
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 4250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 330 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 075647-2SK3906 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3906 |
| Polarity | N-Channel; N-Channel |
| V(BR)DSS | 600 volts |
| PD | 150000 milliwatts |
