Toshiba America Electronic Components, Inc. Discrete Semiconductor Products 2SK3569

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 160152-2SK3569 Category: Discrete Semiconductor Products Family: JFETs(Junction Field Effect) Family Name: 2SK3569 Alternative Parts (Cross-Reference): TSM10NC60CF C0G; NTE2927; TSM10NC65CF C0G; TSM10ND65CI C0G; Introduction Date: January 07, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 160152-2SK3569 Category: Discrete Semiconductor Products Family: JFETs(Junction Field Effect) Family Name: 2SK3569 Alternative Parts (Cross-Reference): TSM10NC60CF C0G; NTE2927; TSM10NC65CF C0G; TSM10ND65CI C0G; Introduction Date: January 07, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - 160152-2SK3569 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
160152-2SK3569
Discrete Semiconductor Products 160152-2SK3569
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 160152-2SK3569 Category: Discrete Semiconductor Products Family: JFETs(Junction Field Effect) Family Name: 2SK3569 Alternative Parts (Cross-Reference): TSM10NC60CF C0G; NTE2927; TSM10NC65CF C0G; TSM10ND65CI C0G; Introduction Date: January 07, 2004 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 160152-2SK3569
Category: Discrete Semiconductor Products
Family: JFETs(Junction Field Effect)
Family Name: 2SK3569
Alternative Parts (Cross-Reference): TSM10NC60CF C0G; NTE2927; TSM10NC65CF C0G; TSM10ND65CI C0G;
Introduction Date: January 07, 2004
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

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Singapore, Singapore
N-Channel 600V 10A MOSFET Transistor
288-2SK3569
N-Channel 600V 10A MOSFET Transistor 288-2SK3569
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) / Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS Product overview: 2SK3569 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK3569 can be used for catalog matching and distributor lookup.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI) / Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS Product overview: 2SK3569 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2SK3569 can be used for catalog matching and distributor lookup.

Supplier's Site
Transistor - 51988089 - Radwell International
Willingboro, NJ, United States
Transistor
51988089
Transistor 51988089
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL POLARITY, 600V DRAIN-SOURCE BREAKDOWN, TO-220 CASE. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N-CHANNEL POLARITY, 600V DRAIN-SOURCE BREAKDOWN, TO-220 CASE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Transistors - 2SK3569 - ODG (Origin Data Global)
Shenzhen, China
Transistors
2SK3569
Transistors 2SK3569
600V 10A 750mΩ@10V,5A 45W 4V@1mA 1 N-Channel TO-220F-3 MOSFETs ROHS

600V 10A 750mΩ@10V,5A 45W 4V@1mA 1 N-Channel TO-220F-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International ODG (Origin Data Global)
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Transistors
Product Number 160152-2SK3569 288-2SK3569 51988089 2SK3569
Product Name Discrete Semiconductor Products N-Channel 600V 10A MOSFET Transistor Transistor Transistors
Package Type TO-220; SOT3
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