Toshiba Corporation 900V 2.5A MOSFET Transistor 2SK3566

Description
MOSFET N-CH 900V 2.5A TO-220SIS Product overview: 2SK3566 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3566 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 900V 2.5A TO-220SIS Product overview: 2SK3566 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3566 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
900V 2.5A MOSFET Transistor
285-2SK3566
900V 2.5A MOSFET Transistor 285-2SK3566
MOSFET N-CH 900V 2.5A TO-220SIS Product overview: 2SK3566 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3566 can be used for catalog matching and distributor lookup.

MOSFET N-CH 900V 2.5A TO-220SIS Product overview: 2SK3566 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 900V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 900V, 2.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-2SK3566 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3566 - 197600-2SK3566 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3566
197600-2SK3566
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3566 197600-2SK3566
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 197600-2SK3566 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 2.5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 12nC @ 10V Max Input Capacitance: 470pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.4 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 197600-2SK3566
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.4 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 39067752 - Radwell International
Willingboro, NJ, United States
Transistor
39067752
Transistor 39067752
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.5A I(D), 900V, 6.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, 2-10R1B, SC-67, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 2.5A I(D), 900V, 6.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, 2-10R1B, SC-67, 3 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 285-2SK3566 197600-2SK3566 39067752
Product Name 900V 2.5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3566 Transistor
Polarity N-Channel N-Channel; N-Channel
PD 40000 milliwatts 40000 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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