Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917 2SK2917

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075607-2SK2917 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N)IS Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3720pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IXTQ460P2; 2SK2917(PP); 2SK2917(SSCM); Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance