Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917 2SK2917

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075607-2SK2917 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N)IS Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3720pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IXTQ460P2; 2SK2917(PP); 2SK2917(SSCM); Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075607-2SK2917 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N)IS Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3720pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IXTQ460P2; 2SK2917(PP); 2SK2917(SSCM); Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917 - 075607-2SK2917 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917
075607-2SK2917
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917 075607-2SK2917
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 075607-2SK2917 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-3P(N)IS Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 18A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 3720pF @ 10V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): IXTQ460P2; 2SK2917(PP); 2SK2917(SSCM); Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 075607-2SK2917
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-3P(N)IS
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 18A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 3720pF @ 10V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 270 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): IXTQ460P2; 2SK2917(PP); 2SK2917(SSCM);
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 103528723 - Radwell International
Willingboro, NJ, United States
Transistor
103528723
Transistor 103528723
MOSFET N-CH 500V 18A TO-3PN . FREE 2 YEAR RADWELL WARRANTY

MOSFET N-CH 500V 18A TO-3PN . FREE 2 YEAR RADWELL WARRANTY

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Technical Specifications

  Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 075607-2SK2917 103528723
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2917 Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 90000 milliwatts
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