Toshiba Electronics (UK) Ltd Single FETs, MOSFETs 2SK2009TE85LF

N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3

N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3

N-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59-3

MOSFET N-CH 30V 200MA SC59-3 Product overview: 2SK2009TE85LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 200MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 200MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK2009TE85LF can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 103301-2SK2009TE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-59-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.5V @ 100μA
Max Input Capacitance: 70pF @ 3V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 Ohm @ 50MA, 2.5V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance