Toshiba Corporation Transistor 2SD549

Description
TRANSISTOR, SILICON NPN - CASE: TO126. FREE 2 YEAR RADWELL WARRANTY
  • Transistor - 66823495 - Radwell International
    Radwell International
Request a Quote
Description
TRANSISTOR, SILICON NPN - CASE: TO126. FREE 2 YEAR RADWELL WARRANTY
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistor - 66823495 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
66823495
Transistor 66823495
TRANSISTOR, SILICON NPN - CASE: TO126. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, SILICON NPN - CASE: TO126. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Radwell International
Product Category RF Transistors
Product Number 66823495
Product Name Transistor
Unlock Full Specs
to access all available technical data

Similar Products

1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor - QPD1028L - Qorvo
Qorvo
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
QPD1028L
Specs
Transistor Technology / Material 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
Transistor Grade / Operating Range Military
Package Type NI-780
View Details
2 suppliers
GaAs Fet Switches - KS201 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS201
Specs
Operating Frequency 20 to 4000 MHz
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Single FETs, MOSFETs - AUIRFR3607TRL - ODG (Origin Data Global)
Infineon Technologies AG
Single FETs, MOSFETs
AUIRFR3607TRL
Specs
Polarity N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts
View Details
5 suppliers