Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Single - 2SA1930(Q,M) 2SA1930(Q,M)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 809940-2SA1930(Q,M)
Packaging: Bulk
Mounting Style: Through Hole
Power - Max: 2W
Transistor Type: PNP
Frequency - Transition: 200MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-220NIS
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3 Full Pack
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 180V
Current - Collector Cutoff (Maximum): 5μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1V at 100mA, 1A
DC Current Gain (hFE) (Min) at Ic, Vce: 100 at 100mA, 5V

TRANS PNP 180V 2A TO220NIS Product overview: 2SA1930(Q,M) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 2A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1930(Q,M) can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS