THAT Corporation Transistor Array, Dip14, 300; Transistor Polarity That Corporation THAT300P14-U

Description
TRANSISTOR ARRAY, DIP14, 300; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:20mA; Power Dissipation Pd:-; DC Current Gain hFE:100hFE; No. of Pins:14Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: Yes
Description
TRANSISTOR ARRAY, DIP14, 300; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:20mA; Power Dissipation Pd:-; DC Current Gain hFE:100hFE; No. of Pins:14Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The THAT 300P14-U is a 14-pin dual in-line package containing four matched NPN transistors with a minimum current gain (hFE) of 60, designed for low-noise amplifier input stages, log amplifiers, and current mirrors. The transistors exhibit a typical voltage noise density of 0.8 nV/√Hz, a gain-bandwidth product of 350 MHz, and collector-emitter breakdown voltage of 36 V. The array is fabricated using dielectric isolation for low crosstalk and high DC isolation, with 500 μV matching between devices. The package is lead-free, RoHS compliant, and suitable for standard through-hole mounting. Thermal resistance is 100 °C/W when soldered to a PCB.

Datasheet Summary
Powered by GS/AI

The THAT 300P14-U is a 14-pin dual in-line package containing four matched NPN transistors with a minimum current gain (hFE) of 60, designed for low-noise amplifier input stages, log amplifiers, and current mirrors. The transistors exhibit a typical voltage noise density of 0.8 nV/√Hz, a gain-bandwidth product of 350 MHz, and collector-emitter breakdown voltage of 36 V. The array is fabricated using dielectric isolation for low crosstalk and high DC isolation, with 500 μV matching between devices. The package is lead-free, RoHS compliant, and suitable for standard through-hole mounting. Thermal resistance is 100 °C/W when soldered to a PCB.

Suppliers

Company
Product
Description
Supplier Links
Transistor Array, Dip14, 300; Transistor Polarity That Corporation - 50M5196 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Array, Dip14, 300; Transistor Polarity That Corporation
50M5196
Transistor Array, Dip14, 300; Transistor Polarity That Corporation 50M5196
TRANSISTOR ARRAY, DIP14, 300; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:20mA; Power Dissipation Pd:-; DC Current Gain hFE:100hFE; No. of Pins:14Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: Yes

TRANSISTOR ARRAY, DIP14, 300; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; DC Collector Current:20mA; Power Dissipation Pd:-; DC Current Gain hFE:100hFE; No. of Pins:14Pins; Transistor Mounting:Through Hole; MSL:-RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 50M5196
Product Name Transistor Array, Dip14, 300; Transistor Polarity That Corporation
Transistor Type Transistor Array, Dip14, 300; Transistor Polarity That Corporation
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