Texas Instruments Memory NM27C010N200

Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-DIP
  • Memory - NM27C010N200 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-DIP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - NM27C010N200 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
NM27C010N200
Memory NM27C010N200
EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-DIP

EPROM - OTP Memory IC 1Mbit Parallel 200 ns 32-DIP

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number NM27C010N200
Product Name Memory
Memory Category EPROM; EPROM
Access Time 200 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - NM27C010VE120 - Lingto Electronic Limited
Rochester Electronics
Memory
NM27C010VE120
Specs
Memory Category EPROM; EPROM
Access Time 120 ns
Density 1000 kbits
View Details
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD74HC40105M - Texas Instruments
Texas Instruments
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register
CD74HC40105M
Specs
Memory Category FIFO
View Details
4 suppliers
Memory - 980000259 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
980000259
View Details
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ4C1024
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details