MOSFET 2 N-CHANNEL 30V 10A 8SON
Mosfet Array 2 N-Channel (Dual) Common Source 30V 10A (Ta) 15.6W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 30V 10A (Ta) 15.6W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 30V 10A (Ta) 15.6W Surface Mount 8-VSON (3.3x3.3)
Manufacturer: Texas Instruments
Win Source Part Number: 806156-CSD87503Q3E
Packaging: Reel
Mounting Style: SMD
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Power - Max: 15.6W
Supplier Device Package: 8-VSON (3.3x3.3)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerVDFN
Popularity: Medium
Fake Threat In the Open Market: 73 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 13.5mOhm at 6A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 17.4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 1020pF at 15V
Current - Continuous Drain (Id) at 25°C: 10A
Vgs(th) (Maximum) at Id: 2.1V at 250μA
30V, N ch NexFET MOSFET™, dual common source SON3x3, 21.9mOhm 8-VSON -55 to 150 Product overview: CSD87503Q3E from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 30V, 21.9mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 30V, 21.9mOhm, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD87503Q3E can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 30V 10A 8VSON
MOSFET 30-V Dual N-Channel MOSFET
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD87503Q3E | 296-51022-6-ND | 806156-CSD87503Q3E | 289-CSD87503Q3E | CSD87503Q3E | CSD87503Q3E |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | FETs - Arrays - CSD87503Q3E | Dual 30V 21.9mOhm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; 2 N-Channel (Dual) Common Source | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 10000 milliamps |