The CSD87312Q3E is a dual 30-V N-channel NexFET Power MOSFET in a SON 3.3 x 3.3 mm plastic package, designed for adaptor and USB input protection in space-constrained applications. It features a drain-to-drain on-resistance of 31 mΩ at VGS=4.5 V and 27 mΩ at VGS=8 V, a total gate charge of 6.3 nC at 4.5 V, and a threshold voltage of 1.0 V. The device is rated for a continuous drain current of 27 A, a maximum junction temperature of 150 °C, and an avalanche energy of 29 mJ. Thermal resistance from junction to case is 4.2 °C/W, and junction-to-ambient is 63 °C/W on a 1 in² copper area. It is RoHS compliant, halogen-free, and operates from -55 °C to 150 °C.
Dual 30-V N-Channel NexFET Power MOSFETs 8-VSON -55 to 150
High Frequency Synchronous Power Module Product overview: CSD87312Q3E from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-CSD87312Q3E can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 109658-CSD87312Q3E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (3.3x3.3)
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 8.2nC @ 4.5V
Max Input Capacitance: 1250pF @ 15V
Maximum Rds On at Id,Vgs: 33 mOhm @ 7A , 8V
Alternative Parts (Cross-Reference): AON2810; MP6K12TCR; CSD87312Q3E-ASY; CSD87312Q3E;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)
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| Texas Instruments | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Rochester Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD87312Q3E | 289-CSD87312Q3E | 109658-CSD87312Q3E | 296-35526-1-ND | CSD87312Q3E | CSD87312Q3E | CSD87312Q3E | CSD87312Q3E |
| Product Name | CSD87312Q3E Dual 30-V N-Channel NexFET Power MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD87312Q3E | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) Common Source | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| rDS(on) | 0.0380 ohms | 0.0380 ohms | ||||||
| IDSS | 45000 milliamps | 27000 milliamps | ||||||
| QG | 6.3 nC |
