Texas Instruments CSD87312Q3E Dual 30-V N-Channel NexFET Power MOSFETs CSD87312Q3E-ASY

The CSD87312Q3E is a dual 30-V N-channel NexFET™ Power MOSFET in a SON 3.3 x 3.3 mm plastic package, designed for adaptor and USB input protection in space-constrained applications. It features a common-source configuration with a drain-to-drain on-resistance of 31 mΩ at VGS=4.5 V and 27 mΩ at VGS=8 V, a total gate charge of 6.3 nC, and an operating junction temperature range of -55°C to 150°C. The device is avalanche rated, RoHS compliant, and has a thermal resistance junction-to-ambient of 63 °C/W when mounted on a 1 in² copper pad on FR4 PCB. The package has 8 pins with drain, gate, and source connections as specified.