P-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150
P-CH JFET, -20V, 3.2A, 33mR, WLP 1x1.5mm, Surface Mount Product overview: CSD25211W1015 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -20V, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -20V, 3.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD25211W1015 can be used for catalog matching and distributor lookup.
P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 20V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
MOSFET P-CH 20V 3.2A 6DSBGA
Manufacturer: Texas Instruments
Win Source Part Number: 916127-CSD25211W1015
Series: NexFET™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
Package: 6-UFBGA, DSBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: CSD25211
Categories: Discrete Semiconductor Products
Case / Package: 6-DSBGA (1x1.5)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 11 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: CSD25211W1015-ND, -296-36578-1-ND, 296-36578-6-NDR, -296-36578-1, 296-36578-1, 296-36578-2-NDR, 296-36578-1-NDR, 296-36578-2, -CSD25211W1015-NDR, 296-36578-6
MOSFET PCh NexFET Power MOSFET
MOSFET P-CH 20V 3.2A 6DSBGA
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD25211W1015 | 278-CSD25211W1015 | 296-36578-1-ND | CSD25211W1015 | 916127-CSD25211W1015 | CSD25211W1015 | CSD25211W1015 |
| Product Name | CSD25211W1015 P-Channel NexFET? Power MOSFET | SMD -20V 3.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD25211W1015 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | ||
| V(BR)DSS | -20 volts | 20 volts | |||||
| rDS(on) | 0.0330 ohms | ||||||
| IDSS | -9500 milliamps | 3200 milliamps | |||||
| QG | 3.4 nC |
