Texas Instruments CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET CSD23203WT

CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA

P-Ch JFET, 19.4mOhm, 6-DSBGA, WLP Product overview: CSD23203WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 19.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 19.4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23203WT can be used for catalog matching and distributor lookup.

P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)

P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)

P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)

Manufacturer: Texas Instruments
Win Source Part Number: 1030665-CSD23203WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DSBGA
Dimension: 6-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6.3nC @ 4.5V
Max Input Capacitance: 914pF @ 4V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 19.4 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance