The CSD23203WT is an 8-V P-channel NexFET power MOSFET in a 6-pin DSBGA package with a 1.0 mm × 1.5 mm footprint and 0.62-mm height. It features a typical on-resistance of 16.2 mΩ at VGS = -4.5 V, a gate charge of 4.9 nC, and a gate-to-source threshold voltage of -0.8 V. The device is rated for a continuous drain current of -3 A and a maximum junction temperature of 150°C. It is RoHS compliant, halogen free, and meets the AEC-Q200 automotive qualification standard. The part is supplied in a 250-piece tape and reel for surface-mount assembly.
CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA
P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA (1x1.5)
P-Ch JFET, 19.4mOhm, 6-DSBGA, WLP Product overview: CSD23203WT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 19.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 19.4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23203WT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030665-CSD23203WT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 750mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 6-DSBGA
Dimension: 6-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 250μA
Max Gate Charge: 6.3nC @ 4.5V
Max Input Capacitance: 914pF @ 4V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 19.4 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET P-CH 8V 3A 6DSBGA
MOSFET CSD23203W 8V P-Ch NexFET Power MOSFET
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD23203WT | 296-38615-2-ND | 278-CSD23203WT | 1030665-CSD23203WT | CSD23203WT | CSD23203WT |
| Product Name | CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET | Single FETs, MOSFETs | 19.4mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD23203WT | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | |||
| V(BR)DSS | -8 volts | 8 volts | ||||
| rDS(on) | 0.0194 ohms | |||||
| IDSS | -54000 milliamps | |||||
| QG | 4.9 nC |
