Texas Instruments High-Performance Analog Single FETs, MOSFETs CSD23201W10

P-Channel 12V 2.2A (Tc) 1W (Ta) Surface Mount 4-DSBGA (1x1)

P-Channel JFET, 12V, 2.2A, 82mR, 325pF, BGA Product overview: CSD23201W10 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 12V, 2.2A, 325pF, BGA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.2A, 325pF, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD23201W10 can be used for catalog matching and distributor lookup.

Manufacturer: Texas Instruments
Win Source Part Number: 100363-CSD23201W10
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 4-DSBGA (1x1)
Dimension: 4-UFBGA, DSBGA
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.2A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 325pF @ 6V
Maximum Gate-Source Voltage: -6V
Maximum Rds On at Id,Vgs: 82 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management, Safety, Industrial