MOSFET P-CH 8V 5A 9DSBGA
P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA
P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA
P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA
POWER MOSFET, P-CH, -8V, -5A, DSBGA-9; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes
MOSFET P-CH 8V 5A 9DSBGA
MOSFET -8V, P ch NexFET MOSFETG , single WLP 1.5x1.5, 5.7mOhm 9-DSBGA -55 to 150
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD22206WT | 296-47005-1-ND | 29AH3848 | CSD22206WT | CSD22206WT |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 8 volts | ||||
| IDSS | 5000 milliamps | -5000 milliamps | |||
| PD | 1700 milliwatts |
