N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
N-Channel 100V 50A (Ta) 2.8W (Ta), 83W (Tc) Surface Mount 8-VSON (3.3x3.3)
100V, N ch NexFET MOSFET™, single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD19537Q3T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 14.5mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 14.5mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19537Q3T can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 50A 8VSON
Manufacturer: Texas Instruments
Win Source Part Number: 1163543-CSD19537Q3T
Series: NexFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerVDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
Family Name: CSD19537Q3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Homepage: www.ti.com
Manufacturer Package: 8-VSON (3.3x3.3)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.6V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1680pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.8W (Ta), 83W (Tc)
Rds On (Maximum) @ Id, Vgs: 14.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): BSZ160N10NS3GXT; FDMC86160; BSZ160N10NS3 G;
Introduction Date: August 27, 2015
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2028
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
MOSFET, N-CH, 100V, 50A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0121ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 100V 50A 8VSON
MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 14.5mOhm 8-VSON-CLIP -55 to 150
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 296-42632-6-ND | 278-CSD19537Q3T | CSD19537Q3T | 1163543-CSD19537Q3T | 29AH3847 | CSD19537Q3T | CSD19537Q3T |
| Product Name | Single FETs, MOSFETs | 100V 14.5mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19537Q3T | Mosfet, N-Ch, 100V, 50A, Vson-8; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |||||
| Package Type | 8-PowerTDFN | 8-PowerTDFN | SOT3 | TO-3 | 8-PowerTDFN | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | ||||||
| IDSS | 50000 milliamps | 50000 milliamps |
