MOSFET N-CH 100V 100A TO220-3
100V, N ch NexFET MOSFET™, single TO-220, 16.5mOhm 3-TO-220 -55 to 175 Product overview: CSD19534KCS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 16.5mOhm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 16.5mOhm, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD19534KCS can be used for catalog matching and distributor lookup.
N-Channel 100V 100A (Ta) 118W (Tc) Through Hole TO-220-3
Manufacturer: Texas Instruments
Win Source Part Number: 812416-CSD19534KCS
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100V
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Temperature Range - Operating: -55°C ~ 175°C
Manufacturer Package: TO-220-3
Power Dissipation (Maximum): 118W (Tc)
Popularity: Low
Fake Threat In the Open Market: 79 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 16.5mOhm at 30A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 22.2nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1670pF at 50V
Current - Continuous Drain (Id) at 25°C: 100A
Vgs(th) (Maximum) at Id: 3.4V at 250μA
Maximum Vgs: ±20V
MOSFET N-CH 100V 100A TO220-3
MOSFET, N-CH, 100V, 100A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0137ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power RoHS Compliant: Yes
MOSFET, N-CH, 100V, 100A, TO-220AB-3; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V; MSL:- RoHS Compliant: Yes
MOSFET 100V N-Channel NexFET Pwr MOSFET
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD19534KCS | 278-CSD19534KCS | 296-38676-5-ND | 812416-CSD19534KCS | CSD19534KCS | 33AH3879 | 41Y0860 | CSD19534KCS |
| Product Name | Single FETs, MOSFETs | 100V 16.5mOhm TO-220 MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - CSD19534KCS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 100A, To-220Ab-3; Transistor Polarity Texas Instruments | Mosfet, N-Ch, 100V, 100A, To-220Ab-3; Channel Type Texas Instruments | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | |||||||
| IDSS | 100000 milliamps | 100000 milliamps | 100000 milliamps | |||||
| PD | 118000 milliwatts | 118000 milliwatts |
