Texas Instruments High-Performance Analog Single FETs, MOSFETs CSD19532Q5BT

Description
MOSFET N-CH 100V 100A 8VSON
Request a Quote Datasheet
Description
MOSFET N-CH 100V 100A 8VSON
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - CSD19532Q5BT - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
CSD19532Q5BT
Single FETs, MOSFETs CSD19532Q5BT
MOSFET N-CH 100V 100A 8VSON

MOSFET N-CH 100V 100A 8VSON

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19532Q5BT - 771886-CSD19532Q5BT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19532Q5BT
771886-CSD19532Q5BT
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19532Q5BT 771886-CSD19532Q5BT
Manufacturer: Texas Instruments Win Source Part Number: 771886-CSD19532Q5BT Series: NexFET Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-PowerTDFN Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Family Name: CSD19532Q5B Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Manufacturer Package: 8-VSON (5x6) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 3.2V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4810pF @ 50V Vgs (Maximum): ±20V Power Dissipation (Maximum): 3.1W (Ta), 195W (Tc) Rds On (Maximum) @ Id, Vgs: 4.9 mOhm @ 17A, 10V Alternative Parts (Cross-Reference): STL115N10F7AG; STL110N10F7; STL92N10F7AG; STL100N10F7; ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Texas Instruments
Win Source Part Number: 771886-CSD19532Q5BT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Family Name: CSD19532Q5B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: 8-VSON (5x6)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 3.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 62nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4810pF @ 50V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 195W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.9 mOhm @ 17A, 10V
Alternative Parts (Cross-Reference): STL115N10F7AG; STL110N10F7; STL92N10F7AG; STL100N10F7;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 296-44471-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44471-2-ND
Single FETs, MOSFETs 296-44471-2-ND
N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - 296-44471-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44471-6-ND
Single FETs, MOSFETs 296-44471-6-ND
N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - 296-44471-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-44471-1-ND
Single FETs, MOSFETs 296-44471-1-ND
N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 100V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6)

Buy Now Datasheet
 - CSD19532Q5BT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 100A I(D), 100V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 100A I(D), 100V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
MOSFET N-CH 100V 100A VSON - 815-CSD19532Q5BT - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 100A VSON
815-CSD19532Q5BT
MOSFET N-CH 100V 100A VSON 815-CSD19532Q5BT
MOSFET N-CH 100V 100A VSON

MOSFET N-CH 100V 100A VSON

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150

MOSFET 100V, N ch NexFET MOSFETG , single SON5x6, 4.9mOhm 8-VSON-CLIP -55 to 150

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD19532Q5BT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD19532Q5BT
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD19532Q5BT
MOSFET N-CH 100V 100A 8VSON

MOSFET N-CH 100V 100A 8VSON

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Rochester Electronics Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD19532Q5BT 771886-CSD19532Q5BT 296-44471-2-ND CSD19532Q5BT 815-CSD19532Q5BT CSD19532Q5BT CSD19532Q5BT
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD19532Q5BT Single FETs, MOSFETs MOSFET N-CH 100V 100A VSON MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 100 volts 100 volts
IDSS 100000 milliamps
PD 3100 milliwatts 3100 to 195000 milliwatts 3100 milliwatts
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