MOSFET N-CH 60V 200A DDPAK
N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
N-Channel 60V 200A (Ta) 375W (Tc) Surface Mount DDPAK/TO-263-3
Manufacturer: Texas Instruments
Win Source Part Number: 1163529-CSD18536KTT
Series: NexFET
Packaging: Reel - TR
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Family Name: CSD18536KTT
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.ti.com
Manufacturer Package: DDPAK/TO-263-3
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 11430pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 375W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
Alternative Parts (Cross-Reference): CSD18536KTTT;
Introduction Date: April 01, 2016
ECCN: EAR99
Estimated EOL Date: 2028
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
MOSFET N-CH 60V 200A DDPAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD18536KTT | 296-44967-1-ND | 1163529-CSD18536KTT | CSD18536KTT | CSD18536KTT |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18536KTT | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | ||||
| IDSS | 200000 milliamps | ||||
| PD | 375000 milliwatts | 375000 milliwatts |