Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
60V, N ch NexFET MOSFET™, single SON5x6, 3.4mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD18532NQ5BT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18532NQ5BT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771873-CSD18532NQ5BT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Family Name: CSD18532NQ5B
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Manufacturer Package: 8-VSON (5x6)
Channel Type Type: N
Drain Source Voltage: 60V
Vgs(th) (Maximum) @ Id: 3.4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 64nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5340pF @ 30V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta), 156W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.4 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IRFH7085TRPbF; BSC031N06NS3GXT; BSC028N06LS3GXT; BSC028N06LS3 G;
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 60V 100A (Ta) 3.1W (Ta), 156W (Tc) Surface Mount 8-VSON-CLIP (5x6)
MOSFET, N-CH, 60V, VSON-6; Transistor Polarity:N Channel; Continuous Drain Current Id:151A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation RoHS Compliant: Yes
MOSFET 60-V N-Channel NexFET Power Mosfet
MOSFET N-CH 60V 100A 8VSON
| Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD18532NQ5BT | 278-CSD18532NQ5BT | 771873-CSD18532NQ5BT | 296-44042-1-ND | 28AH2097 | CSD18532NQ5BT | CSD18532NQ5BT |
| Product Name | 60V 3.4mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18532NQ5BT | Single FETs, MOSFETs | Mosfet, N-Ch, 60V, Vson-6; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | |||||
| rDS(on) | 0.0044 ohms | 0.0027 ohms | |||||
| Package Type | VSON8 | SOT3 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | ||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
