N-Ch MOSFET, 40V, 2.3mOhm, SON5x6, 5-Pin Product overview: CSD18511Q5AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 2.3mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 2.3mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18511Q5AT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 771870-CSD18511Q5AT
Series: NexFET
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-PowerTDFN
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A
Family Name: CSD18511Q5A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-VSONP (5x6)
Channel Type Type: N
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.45V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5850pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 3.1W (Ta)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 24A, 4.5V
Alternative Parts (Cross-Reference): TSM033NB04CR RLG; TSM033NB04LCR RLG; STL115N4LF7; SM033NB04LCR RLG;
Introduction Date: December 16, 2016
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 40V 159A (Tc) 104W (Tc) Surface Mount 8-VSONP (5x6)
MOSFET, N-CH, 40V, 27A, VSON; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation RoHS Compliant: Yes
MOSFET N-CH 40V 159A 8VSON
MOSFET N-CH 40V 159A 8VSON
MOSFET 40V N-Channel NexFET Power MOSFET
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD18511Q5AT | 771870-CSD18511Q5AT | 296-45230-6-ND | 29AH3835 | CSD18511Q5AT | CSD18511Q5AT | CSD18511Q5AT |
| Product Name | 40V 2.3mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18511Q5AT | Single FETs, MOSFETs | Mosfet, N-Ch, 40V, 27A, Vson; Transistor Polarity Texas Instruments | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| QG | 63 nC | ||||||
| PD | 3100 milliwatts | 104000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3 | 8-PowerTDFN | TO-3 | 8-PowerTDFN | 8-PowerTDFN | ||
| Packing Method | Tape Reel; Reel package | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
