Texas Instruments CSD18502KCS 40-V, N-Channel NexFET? Power MOSFETs CSD18502KCS

40-V, N-Channel NexFET? Power MOSFETs 3-TO-220 -55 to 150

MOSFET N-CH 40V 100A TO220-3

Power Field-Effect Transistor, 100A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

N-Channel 40V 100A (Tc) 259W (Tc) Through Hole TO-220-3

40V N-CH MOSFET TO-220 2.9mR 100A NexFET Product overview: CSD18502KCS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18502KCS can be used for catalog matching and distributor lookup.

Manufacturer: Texas Instruments
Win Source Part Number: 1030623-CSD18502KCS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 259W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 4680pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.9 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient