The CSD18502KCS is a 40V N-channel NexFET power MOSFET in a TO-220 package with a maximum height of 19.65 mm, designed for power conversion applications such as DC-DC conversion and motor control. It has a drain-to-source on-resistance of 2.4 mΩ at VGS = 10V and 3.3 mΩ at VGS = 4.5V, a gate charge of 52 nC at 10V, and a threshold voltage of 1.8 V. The device supports a continuous drain current of 212 A at TC = 25°C and 150 A at TC = 100°C, with a pulsed drain current rating of 400 A. It is rated for a junction temperature range of -55°C to 175°C, has a junction-to-case thermal resistance of 0.6°C/W, and is avalanche rated with 330 mJ single-pulse energy. The part is RoHS compliant and halogen free.
40-V, N-Channel NexFET? Power MOSFETs 3-TO-220 -55 to 150
N-Channel 40V 100A (Tc) 259W (Tc) Through Hole TO-220-3
Power Field-Effect Transistor, 100A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220
40V N-CH MOSFET TO-220 2.9mR 100A NexFET Product overview: CSD18502KCS from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, TO-220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD18502KCS can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030623-CSD18502KCS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 259W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.1V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 4680pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.9 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 40V 100A TO220-3
MOSFET N-CH 40V 100A TO220-3
MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs
MOSFET, N CH, 40V, 212A, TO-220 ROHS COMPLIANT: YES
| Texas Instruments | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD18502KCS | 296-CSD18502KCS-ND | CSD18502KCS | 278-CSD18502KCS | 1030623-CSD18502KCS | CSD18502KCS | CSD18502KCS | CSD18502KCS | 26AJ5571 |
| Product Name | CSD18502KCS 40-V, N-Channel NexFET? Power MOSFETs | Single FETs, MOSFETs | 40V 100A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD18502KCS | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Mosfet, N Ch, 40V, 212A, To-220 Rohs Compliant Texas Instruments | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 40 volts | 40 volts | 40 volts | ||||||
| rDS(on) | 0.0043 ohms | 0.0043 ohms | |||||||
| IDSS | 211000 milliamps | 100000 milliamps | |||||||
| QG | 52 nC |
