30V, N ch NexFET MOSFET™, single SON3x3, 4.7mOhm 8-VSONP -55 to 150 Product overview: CSD17581Q3AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4.7mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4.7mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17581Q3AT can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030621-CSD17581Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 1.7V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 3640pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.8 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel 30V 60A (Tc) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 60A (Tc) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 60A (Tc) 2.8W (Ta), 63W (Tc) Surface Mount 8-VSONP (3x3.3)
MOSFET N-CH 30V 60A 8VSON
MOSFET N-CH 30V 60A 8VSON
MOSFET, N-CH, 30V, 60A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.3V; Power RoHS Compliant: Yes
PDFN-8(3x3.2) MOSFETs ROHS
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-CSD17581Q3AT | 1030621-CSD17581Q3AT | 296-45025-2-ND | CSD17581Q3AT | CSD17581Q3AT | 26AJ5569 | CSD17581Q3AT | CSD17581Q3AT |
| Product Name | 30V 4.7mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17581Q3AT | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 30V, 60A, Vson-8; Transistor Polarity Texas Instruments | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||||
| V(BR)DSS | 30 volts | 30 volts | ||||||
| QG | 54 nC | |||||||
| PD | 2800 to 63000 milliwatts | 2800 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
