CSD17578Q3AT is a 30 V N-Channel NexFET™ power MOSFET in an 8-pin SON 3.3 mm × 3.3 mm plastic package. It has a drain-to-source on-resistance of 6.3 mΩ at VₒS=10 V and 8.2 mΩ at VₒS=4.5 V, a total gate charge of 7.9 nC at 4.5 V, and a threshold voltage of 1.5 V. The device is rated for continuous drain current of 54 A at Tₒ=25 °C and pulsed drain current of 142 A. It supports a junction operating temperature range of -55 °C to 150 °C and has a junction-to-case thermal resistance of 4.2 °C/W. The package is lead-free, RoHS compliant, and halogen-free, supplied in a 7-inch tape and reel format.
CSD17578Q3A 30 V N-Channel NexFET? Power MOSFET 8-VSONP
30V, N ch NexFET MOSFET™, single SON3x3, 9.4mOhm 8-VSONP -55 to 150 Product overview: CSD17578Q3AT from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 9.4mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 9.4mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17578Q3AT can be used for catalog matching and distributor lookup.
N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.3)
N-Channel 30V 20A (Ta) 3.2W (Ta), 37W (Tc) Surface Mount 8-VSONP (3x3.3)
Manufacturer: Texas Instruments
Win Source Part Number: 1030618-CSD17578Q3AT
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSONP (3x3.15)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Ta)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 22.2nC @ 10V
Max Input Capacitance: 1590pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.3 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
MOSFET 30V NCh NexFET Pwr MOSFET
MOSFET N-CH 30V 20A 8VSON
MOSFET N-CH 30V 20A 8VSON
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17578Q3AT | 278-CSD17578Q3AT | 296-38462-2-ND | 1030618-CSD17578Q3AT | CSD17578Q3AT | CSD17578Q3AT | CSD17578Q3AT |
| Product Name | CSD17578Q3A CSD17578Q3A 30 V N-Channel NexFET? Power MOSFET | 30V 9.4mOhm MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17578Q3AT | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||
| rDS(on) | 0.0094 ohms | ||||||
| IDSS | 142000 milliamps | 20000 milliamps | |||||
| QG | 7.9 nC |
