30V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150
MOSFET N-CH 30V 34A/100A 8VSON
30V N-CH MOSFET, 1.8mR, 100A, VSON, Surface Mount Product overview: CSD17556Q5B from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17556Q5B can be used for catalog matching and distributor lookup.
N-Channel 30V 34A (Ta), 100A (Tc) 3.1W (Ta), 191W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 34A (Ta), 100A (Tc) 3.1W (Ta), 191W (Tc) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 34A (Ta), 100A (Tc) 3.1W (Ta), 191W (Tc) Surface Mount 8-VSON-CLIP (5x6)
Manufacturer: Texas Instruments
Win Source Part Number: 013373-CSD17556Q5B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta), 191W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 34A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.65V @ 250μA
Max Gate Charge: 39nC @ 4.5V
Max Input Capacitance: 7020pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.4 mOhm @ 40A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance
MOSFET, N-CH, 30V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power RoHS Compliant: Yes
MOSFET 30V N-Ch NexFET Power MOSFETs
MOSFET N-CH 30V 34A/100A 8VSON
| Texas Instruments | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD17556Q5B | CSD17556Q5B | 278-CSD17556Q5B | 296-35726-6-ND | 013373-CSD17556Q5B | 29AH3830 | CSD17556Q5B | CSD17556Q5B |
| Product Name | CSD17556Q5B 30V N-Channel NexFET Power MOSFETs | Single FETs, MOSFETs | SMD 30V 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17556Q5B | Mosfet, N-Ch, 30V, 100A, Vson-8; Transistor Polarity Texas Instruments | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| rDS(on) | 0.0018 ohms | 0.0012 ohms | ||||||
| IDSS | 217000 milliamps | 34000 milliamps | 100000 milliamps | |||||
| QG | 28.5 nC |
