30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150
30V N-Ch MOSFET, 5.9mOhm, 100A, SON5x6, Surface Mount Product overview: CSD17310Q5A from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 5.9mOhm, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 5.9mOhm, 100A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17310Q5A can be used for catalog matching and distributor lookup.
MOSFET N-CH 30V 21A/100A 8VSON
Power Field-Effect Transistor, 100A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
Win Source Part Number: 083177-CSD17310Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.8V @ 250μA
Max Gate Charge: 11.6nC @ 4.5V
Max Input Capacitance: 1560pF @ 15V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 20A, 8V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
MOSFET 30V N Channel NexFET Power MOSFET
MOSFET N-CH 30V 21A/100A 8VSON
MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.3V; Power DissipationRoHS Compliant: Yes
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17310Q5A | 278-CSD17310Q5A | CSD17310Q5A | CSD17310Q5A | 083177-CSD17310Q5A | 296-25858-6-ND | CSD17310Q5A | CSD17310Q5A | 28AH2088 |
| Product Name | CSD17310Q5A 30V N Channel NexFET? Power MOSFET | SMD 30V 5.9mOhm 100A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17310Q5A | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | ||||||
| rDS(on) | 0.0059 ohms | 0.0078 ohms | 0.0039 ohms | ||||||
| IDSS | 134000 milliamps | 21000 milliamps | 100000 milliamps | ||||||
| QG | 8.9 nC |
