Texas Instruments CSD17306Q5A 30V N Channel NexFET? Power MOSFET CSD17306Q5A

Description
30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150
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Description
30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150
Request a Quote Datasheet

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CSD17306Q5A 30V N Channel NexFET? Power MOSFET - CSD17306Q5A - Texas Instruments
Dallas, TX, United States
CSD17306Q5A 30V N Channel NexFET? Power MOSFET
CSD17306Q5A
CSD17306Q5A 30V N Channel NexFET? Power MOSFET CSD17306Q5A
30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150

30V N Channel NexFET? Power MOSFET 8-VSONP -55 to 150

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17306Q5A - 137157-CSD17306Q5A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17306Q5A
137157-CSD17306Q5A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17306Q5A 137157-CSD17306Q5A
Manufacturer: Texas Instruments Win Source Part Number: 137157-CSD17306Q5A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.2W (Ta) Family Name: CSD17306Q5A Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-VSON (5x6) Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 24A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 1.6V @ 250μA Max Gate Charge: 15.3nC @ 4.5V Max Input Capacitance: 2170pF @ 15V Maximum Gate-Source Voltage: +10V, -8V Maximum Rds On at Id,Vgs: 3.7 mOhm @ 22A, 8V Introduction Date: February 01, 2010 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2031 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Texas Instruments
Win Source Part Number: 137157-CSD17306Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta)
Family Name: CSD17306Q5A
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 24A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 15.3nC @ 4.5V
Max Input Capacitance: 2170pF @ 15V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 3.7 mOhm @ 22A, 8V
Introduction Date: February 01, 2010
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - 296-25856-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25856-6-ND
Single FETs, MOSFETs 296-25856-6-ND
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

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Single FETs, MOSFETs - 296-25856-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25856-2-ND
Single FETs, MOSFETs 296-25856-2-ND
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

Buy Now Datasheet
Single FETs, MOSFETs - 296-25856-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
296-25856-1-ND
Single FETs, MOSFETs 296-25856-1-ND
N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

N-Channel 30V 24A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSONP (5x6)

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Sheung Wan, Hong Kong
MOSFET 30V N Channel NexFET Power MOSFET

MOSFET 30V N Channel NexFET Power MOSFET

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Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments - 29AH3826 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments
29AH3826
Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments 29AH3826
MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes

MOSFET, N CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:1.1V; Power DissipationRoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - CSD17306Q5A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
CSD17306Q5A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs CSD17306Q5A
MOSFET N-CH 30V 24A/100A 8VSON

MOSFET N-CH 30V 24A/100A 8VSON

Supplier's Site

Technical Specifications

  Texas Instruments Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number CSD17306Q5A 137157-CSD17306Q5A 296-25856-6-ND CSD17306Q5A 29AH3826 CSD17306Q5A
Product Name CSD17306Q5A 30V N Channel NexFET? Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17306Q5A Single FETs, MOSFETs MOSFET Mosfet, N Ch, 30V, 100A, 8Son; Transistor Polarity Texas Instruments Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
rDS(on) 0.0042 ohms 0.0029 ohms
IDSS 155000 milliamps 100000 milliamps
QG 11.8 nC
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