30V N Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-Channel 30V 32A (Ta), 100A (Tc) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)
N-CH MOSFET 30V 32A 8-Pin SON Surface Mount Product overview: CSD17303Q5 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 30V, 32A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 30V, 32A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD17303Q5 can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 1030597-CSD17303Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON-CLIP (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 32A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.6V @ 250μA
Max Gate Charge: 23nC @ 4.5V
Max Input Capacitance: 3420pF @ 15V
Maximum Gate-Source Voltage: +10V, -8V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 25A, 8V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power Field-Effect Transistor, 100A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V N Channel NexFET Power MOSFET
CSD17303Q5 30V, N CHANNEL NEXFET
MOSFET TRANSISTOR; TRANSISTOR POLARITY:N; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019) RoHS Compliant: No
| Texas Instruments | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD17303Q5 | 296-27232-2-ND | 278-CSD17303Q5 | 1030597-CSD17303Q5 | CSD17303Q5 | CSD17303Q5 | CSD17303Q5 | 26AJ5567 |
| Product Name | CSD17303Q5 30V N Channel NexFET? Power MOSFET | Single FETs, MOSFETs | SMD 30V 32A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD17303Q5 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor; Transistor Polarity Texas Instruments | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||||
| rDS(on) | 0.0026 ohms | 0.0037 ohms | ||||||
| IDSS | 200000 milliamps | |||||||
| QG | 18 nC |
