25V NexFET N Channel Power MosFET 8-VSON-CLIP -55 to 150
Manufacturer: Texas Instruments
Win Source Part Number: 013359-CSD16556Q5B
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 191W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 1.7V @ 250μA
Max Gate Charge: 47nC @ 4.5V
Max Input Capacitance: 6180pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.07 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET N-CH 25V 100A 8VSON
N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6)
N-Channel 25V 100A (Tc) 3.2W (Ta), 191W (Tc) Surface Mount 8-VSONP (5x6)
25V N-CH MOSFET, 1.2mR Rds(on), 100A ID, VSON Product overview: CSD16556Q5B from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16556Q5B can be used for catalog matching and distributor lookup.
MOSFET 25V NexFET N Ch Pwr MosFET
MOSFET N-CH 25V 100A 8VSON
MOSFET, N CHANNEL, 25V, 100A, 0.0009OHM,; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019) RoHS Compliant: Yes
| Texas Instruments | Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16556Q5B | 013359-CSD16556Q5B | CSD16556Q5B | 296-35627-2-ND | 278-CSD16556Q5B | CSD16556Q5B | CSD16556Q5B | 26AJ5566 |
| Product Name | CSD16556Q5B 25V NexFET N Channel Power MosFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16556Q5B | Single FETs, MOSFETs | Single FETs, MOSFETs | 25V 100A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 25V, 100A, 0.0009Ohm,; Msl Texas Instruments |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| rDS(on) | 0.0015 ohms | |||||||
| IDSS | 249000 milliamps | 100000 milliamps | ||||||
| QG | 37 nC |