Texas Instruments High-Performance Analog 25V 1.8mOhm MOSFET Transistor CSD16415Q5T

25V, N ch NexFET MOSFET™, single SON5x6, 1.8mOhm 8-VSON-CLIP -55 to 150 Product overview: CSD16415Q5T from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 1.8mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 1.8mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16415Q5T can be used for catalog matching and distributor lookup.

N-Channel 25V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 25V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-Channel 25V 100A (Ta) 3.2W (Ta) Surface Mount 8-VSON-CLIP (5x6)

Manufacturer: Texas Instruments
Win Source Part Number: 723052-CSD16415Q5T
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 8-PowerTDFN
Power Dissipation (Maximum): 3.2W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 25V
Id - Continuous Drain Current: 100A
Rds On (Maximum) at Id, Vgs: 1.15mOhm at 40A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1.9V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 29nC at 4.5V
Gate Source Voltage (Maximum): +16V, -12V
Input Capacitance (Ciss) (Maximum) at Vds: 4100pF at 12.5V