N-Channel NexFET™ Power MOSFET in a 5 mm × 6 mm SON plastic package, designed for point-of-load synchronous buck converters in networking, telecom, and computing systems. It has a drain-to-source voltage rating of 25 V, continuous drain current of 24 A at TC = 25°C, and on-resistance of 3.1 mΩ at VGS = 10 V. The device features ultra-low gate charge of 9 nC (at 4.5 V), avalanche energy rating of 106 mJ, and thermal resistance junction-to-case of 2.6 °C/W. It is RoHS compliant, halogen-free, and has a junction and storage temperature range of -55°C to 150°C.
N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150
Power Field-Effect Transistor, 100A I(D), 25V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CH MOSFET, 25V, 100A, 5.6mOhm, NexFET, SON5x6 Product overview: CSD16413Q5A from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 100A, 5.6mOhm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 100A, 5.6mOhm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16413Q5A can be used for catalog matching and distributor lookup.
Manufacturer: Texas Instruments
Win Source Part Number: 013356-CSD16413Q5A
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 24A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 11.7nC @ 4.5V
Max Input Capacitance: 1780pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 3.9 mOhm @ 24A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 25V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 24A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
MOSFET N-CH 25V 24A/100A 8VSON
MOSFET N-Ch NexFET Power MOSFETs
| Texas Instruments | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | CSD16413Q5A | CSD16413Q5A | 278-CSD16413Q5A | 013356-CSD16413Q5A | 296-24524-2-ND | CSD16413Q5A | CSD16413Q5A |
| Product Name | CSD16413Q5A N-Channel NexFET™ Power MOSFET | 25V 100A 5.6mOhm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16413Q5A | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | |||||
| rDS(on) | 0.0056 ohms | 0.0056 ohms | |||||
| IDSS | 156000 milliamps | ||||||
| QG | 9 nC |
