Texas Instruments CSD16407Q5C DualCool? N-Channel NexFET? Power MOSFET CSD16407Q5C

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150

N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSON-CLIP (5x6)

N-CH Power MOSFET 25V 31A VSON-CLIP EP SMT Product overview: CSD16407Q5C from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 31A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 31A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16407Q5C can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 100A I(D), 25V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Texas Instruments
Win Source Part Number: 139599-CSD16407Q5C
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON-CLIP (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 31A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 2660pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): BSZ018NE2LSI; CSD16325Q5C; CSD16321Q5C;
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance