N-Channel NexFET™ Power MOSFET 8-VSON-CLIP -55 to 150
25V N-CH MOSFET, 3.3mOhm, 100A, SON5x6, Surface Mount Product overview: CSD16407Q5 from Texas Instruments is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 25V, 3.3mOhm, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 25V, 3.3mOhm, 100A, MOSFET Transistor. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-CSD16407Q5 can be used for catalog matching and distributor lookup.
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
N-Channel 25V 31A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
MOSFET N-CH 25V 31A/100A 8VSON
Power Field-Effect Transistor, 100A I(D), 25V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer: Texas Instruments
Win Source Part Number: 083176-CSD16407Q5
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.1W (Ta)
Family Name: CSD16407Q5
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (5x6)
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 31A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 1.9V @ 250μA
Max Gate Charge: 18nC @ 4.5V
Max Input Capacitance: 2660pF @ 12.5V
Maximum Gate-Source Voltage: +16V, -12V
Maximum Rds On at Id,Vgs: 2.4 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SiR844DP; SIR888DP-T1-GE3; SIR888DP; SiR844DP-T1-GE3;
Introduction Date: May 12, 2009
Estimated EOL Date: 2031
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
MOSFET N-Ch NexFET Power MOSFETs
MOSFET N-CH 25V 31A/100A 8VSON
| Texas Instruments | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Rochester Electronics | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | CSD16407Q5 | 278-CSD16407Q5 | 296-24252-6-ND | CSD16407Q5 | CSD16407Q5 | 083176-CSD16407Q5 | CSD16407Q5 | CSD16407Q5 |
| Product Name | CSD16407Q5 N-Channel NexFET™ Power MOSFET | SMD 25V 3.3mOhm 100A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - CSD16407Q5 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 25 volts | 25 volts | 25 volts | |||||
| rDS(on) | 0.0033 ohms | 0.0033 ohms | ||||||
| IDSS | 200000 milliamps | 31000 milliamps | ||||||
| QG | 13.3 nC |
